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Audicodecalculatorauz1z1. This is a Pro version of Audicodecalculatorauz1z1. From Makkah 1438 by Jared Masaniai. . 56 items. Audicodecalculatorauz1z1. Audicodecalculatorauz1z1. -64-bit. audicodecalculatorauz1z1 Audicodecalculatorauz1z1. 60 items. Facebook. Twitter. Audicodecalculatorauz1z1. No items have been added yet! Related Collections. Do you use Audicodecalculatorauz1z1? Share with your friends! . Audicodecalculatorauz1z1.1. Field of the Invention The present invention relates to a method for fabricating a semiconductor device, and more particularly, to a method for fabricating a semiconductor device having a gate buried type metal-oxide-semiconductor (MOS) transistor. 2. Description of the Prior Art Conventional metal-oxide-semiconductor (MOS) transistors include source/drain diffusions formed in semiconductor substrates by introducing dopant impurities into the substrate through a channel-inverting ion implantation process, followed by a heat treatment process to activate the dopant impurities, and subsequently a process of forming gate structures and forming source/drain extensions through a follow-up thermal annealing process. As an approach to reduce the size of the MOS transistor, the channel-inverting ion implantation process is performed to form a lightly doped drain (LDD) region beneath the gate structure. The LDD region is formed by channel-inverting ion implantation to reduce the dopant concentration near the junction between the channel and the drain region. In order to reduce the concentration of the dopant impurities near the junction between the channel and the drain region, the channel-inverting ion implantation process is performed to form the LDD region in such a way that the angle of the dopant impurities along the channel is larger than 90° (in other words, the ion implantation angles are obliquely angled relative to the surface of the semiconductor substrate). When the LDD region is formed, the gate structure and the source/drain diffusions are typically formed simultaneously, so as to
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